1999 Jun 01
2
Philips Semiconductors
Product specification
High-speed diodes
1N4150; 1N4151
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
General application
Continuous reverse voltage:
max. 50 V
Repetitive peak reverse voltage:
max. 75 V
Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
APPLICATIONS
High-speed switching
1N4150: general purpose use in
computer and industrial
applications
1N4151: military and industrial
applications.
DESCRIPTION
The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The marking band indicates the cathode.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
75
V
V
R
continuous reverse voltage
-
50
V
I
F
continuous forward current
see Fig.2; note 1
1N4150
-
300
mA
1N4151
-
200
mA
I
FRM
repetitive peak forward current
1N4150
-
600
mA
1N4151
-
450
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
500
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1999 Jun 01
3
Philips Semiconductors
Product specification
High-speed diodes
1N4150; 1N4151
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
1N4150
I
F
= 1 mA
540
620
mV
I
F
= 10 mA
660
740
mV
I
F
= 50 mA
760
860
mV
I
F
= 100 mA
820
920
mV
I
F
= 200 mA
870
1000
mV
1N4151
I
F
= 50 mA
-
1000
mV
I
R
reverse current
V
R
= 50 V; see Fig.5
1N4150
-
0.1
A
1N4151
-
0.05
A
I
R
reverse current
V
R
= 50 V; T
j
= 150
C; see Fig.5
1N4150
-
100
A
1N4151
-
50
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
1N4150
-
2.5
pF
1N4151
-
2
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 1 mA; R
L
= 100
; measured at
I
R
= 0.1 mA; see Fig.7
1N4150
-
6
ns
when switched from I
F
= 10 mA to 200 mA
to I
R
= 10 mA to 200 mA; R
L
= 100
;
measured at I
R
= 0.1
I
F
; see Fig.7
-
4
ns
when switched from I
F
= 200 mA to 400 mA
to I
R
= 200 mA to 400 mA; R
L
= 100
;
measured at I
R
= 0.1
I
F
; see Fig.7
-
6
ns
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
1N4151
-
4
ns
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
-
2
ns
t
fr
forward recovery time
when switched to I
F
= 200 mA; t
r
= 0.4 ns;
measured at V
F
= 1 V; see Fig.8
-
10
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
350
K/W
1999 Jun 01
4
Philips Semiconductors
Product specification
High-speed diodes
1N4150; 1N4151
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
400
300
200
0
100
MBG456
Tamb (
o
C)
IF
(mA)
(1)
(2)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(1) 1N4150.
(2) 1N4151.
Fig.3
Forward current as a function of forward
voltage.
(1) T
j
= 175
C; typical values.
(2) T
j
= 25
C; typical values.
handbook, halfpage
0
1
2
600
0
200
400
MGD291
VF (V)
IF
(mA)
(1)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1999 Jun 01
5
Philips Semiconductors
Product specification
High-speed diodes
1N4150; 1N4151
Fig.5
Reverse current as a function of junction
temperature.
(1) V
R
= 75 V; typical values.
(2) V
R
= 20 V; typical values.
handbook, halfpage
0
100
Tj (
o
C)
200
10
3
10
2
10
-
1
10
-
2
10
(1)
1
IR
(
A)
MGD290
(2)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
10
20
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
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